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| PZT751T1 Preferred Device PNP Silicon Planar Epitaxial Transistor This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. Features http://onsemi.com * High Current: 2.0 A * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved * * thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die NPN Complement is PZT651T1 Pb-Free Package is Available SOT-223 PACKAGE HIGH CURRENT PNP SILICON TRANSISTOR SURFACE MOUNT COLLECTOR 2, 4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = 25C(1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 60 80 5.0 2.0 0.8 6.4 -65 to 150 150 Unit Vdc Vdc Vdc Adc W mW/C C C MARKING DIAGRAM TO-261AA CASE 318E STYLE 1 D ZT 751 THERMAL CHARACTERISTICS Rating Thermal Resistance from Junction-to- Ambient in Free Air Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol RqJA TL Value 156 260 10 Unit C/W C Sec ZT 751 = Specific Device Code D = Date Code ORDERING INFORMATION Device PZT751T1 PZT751T1G Package SOT-223 SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 1000 / Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2004 January, 2004 - Rev. 4 1 Publication Order Number: PZT751T1/D PZT751T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base-Emitter Cutoff Current (VEB = 4.0 Vdc) Collector-Base Cutoff Current (VCB = 80 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO IEBO ICBO 60 80 5.0 - - - - - 0.1 100 Vdc Vdc Vdc mAdc nAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 50 mAdc, VCE = 2.0 Vdc) (IC = 500 mAdc, VCE = 2.0 Vdc) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 2.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltages (IC = 2.0 Adc, IB = 200 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base-Emitter Voltages (IC = 1.0 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) Current-Gain-Bandwidth (IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%. hFE 75 75 75 40 - - - - 75 - - - - 0.5 0.3 1.0 1.2 - - VCE(sat) Vdc VBE(on) VBE(sat) fT Vdc Vdc MHz http://onsemi.com 2 PZT751T1 NPN 300 270 hFE, DC CURRENT GAIN 240 210 180 150 120 90 60 30 0 10 20 50 100 200 500 1.0 A 2.0 A 4.0 A IC, COLLECTOR CURRENT (mA) 25C TJ = 125C VCE = 2.0 V hFE, DC CURRENT GAIN 250 225 200 175 150 125 100 75 50 25 0 -10 -20 -50 -100 -200 -500 -1.0 A -2.0 A -4.0 A IC, COLLECTOR CURRENT (mA) -55 C 25C TJ = 125C PNP VCE = -2.0 V -55 C Figure 1. Typical DC Current Gain Figure 2. Typical DC Current Gain 2.0 1.8 1.6 V, VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0 50 100 NPN -2.0 -1.8 -1.6 V, VOLTAGE (VOLTS) -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 2.0 A 4.0 A 0 -50 -100 PNP 1.4 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 200 500 1.0 A IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 -200 -500 -1.0 A IC, COLLECTOR CURRENT (mA) -2.0 A -4.0 A Figure 3. On Voltages Figure 4. On Voltages http://onsemi.com 3 PZT751T1 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IB, BASE CURRENT (mA) 50 100 200 500 IC = 10 mA IC = 100 mA IC = 500 mA IC = 2.0 A TJ = 25C NPN -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 IC = -10 mA PNP TJ = 25C IC = -500 mA IC = -100 mA IC = -2.0 A 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) -50 -100 -200 -500 Figure 5. Collector Saturation Region Figure 6. Collector Saturation Region 10 4.0 IC, COLLECTOR CURRENT 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 1.0 TA = 25C NPN -10 -4.0 1.0 ms 100 ms -2.0 -1.0 -0.5 TC = 25C -0.2 -0.1 -0.05 -0.02 100 -0.01 -1.0 TA = 25C PNP 1.0 ms MPS75 0 MPS75 1 100 ms MPS65 0 MPS65 1 TC = 25C WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -2.0 -5.0 -10 -20 -50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) -100 Figure 7. Safe Operating Area Figure 8. Safe Operating Area http://onsemi.com 4 PZT751T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 4 S 1 2 3 B L D G C J M 0.08 (0003) H K SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 PZT751T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 PZT751T1/D |
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